An investigation of Delta-doped field effect transistors
In this work two novel gallium arsenide field effect transistor (FET) structures have been investigated. Both single and double plane delta-doped device layers were grown by molecular beam epitaxy, processed into devices and then D.C. characterized. The simplified analytical D.C. device theory of th...
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Swansea University
1991
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.638344 |