Electronic characterisation of amorphous silicon-carbon alloy thin films
Excess electron and hole drift mobilities in hydrogenated amorphous silicon-carbon alloy thin films have been investigated using the time-of-flight technique. A detailed study of the temperature and electric field dependence of these parameters has been carried out. This has permitted the computatio...
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Swansea University
1995
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.636060 |