An optical study of III-nitride semiconductor devices, their thermal properties and degradation mechanisms
Degradation processes in AIGaN/GaN high electron mobility transistors were investigated by optical methods. Temperatures within device channels, as well as electric fields are important for on-state degradation. Raman and photoluminescence (PL) thermography were used to investigate these temperature...
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University of Bristol
2014
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.627918 |