Electrical characterization of III-V antimonide/GaAs heterostuctures grown by Interfacial Misfit molecular beam epitaxy technique
Lattice mismatched heterostructures grown by Interfacial Misfit (IMF) technique, which allows the strain energy to be relieved both laterally and perpendicularly from the interfaces, are investigated. However, electrically active defects are created at the interface and away from the interface with...
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University of Nottingham
2014
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.625528 |