Electrical and physical characterization of Ge devices
With continued scaling down of devices it is necessary to look into new materials in order to improve device performance. Ge and SiGe are good candidates for channel materials since they present high carrier mobility. Also, in order to reduce the gate leakage as the dielectric thickness is reduced i...
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University of Warwick
2014
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.618941 |