Resistive switching in silicon-rich silicon oxide
Over the recent decade, many different concepts of new emerging memories have been proposed. Examples of such include ferroelectric random access memories (FeRAMs), phase-change RAMs (PRAMs), resistive RAMs (RRAMs), magnetic RAMs (MRAMs), nano-crystal floating-gate flash memories, among others. The...
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University College London (University of London)
2014
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.617918 |