Gas sensors using carbon nanotubes
A novel approach has been adopted for in-situ growth of CNTs on CMOS Silicon on Insulator (SOI) devices. The growth and deposition of CNTs on SOI CMOS has been successfully implemented at high temperature (>700°C) using tungsten as an interconnect. A detailed study of the nanotubes growth depende...
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University of Cambridge
2008
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.603677 |