Transport properties of GaAs/InGaAs double quantum wells and graded InGaAs heterostructures
In the first structure presented a single two-dimensional electron gas is positioned in a region of graded (0 ≤ <i>x</i> ≤ 0.1) InGaAs composition. Through a series of MBE grown wafers the technique of successfully growing InGaAs as an InAs/GaAs superlattice was demonstrated. Varying the...
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University of Cambridge
2006
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.599457 |