Dual-gate high electron mobility transistors using a multiple-split-gate structure
This dissertation introduces the concept of a dual-gate high electron mobility transistor (HEMT) using a multiple-split-gate structure. The device is a field effect transistor in which the current is under the control of two independent gates; one of these is a multiple-split-gate, the other is a co...
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University of Cambridge
1998
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.597852 |