MOVPE growth and characterisation of III-nitrides on silicon
Gallium nitride (GaN) and its related alloys - aluminium gallium nitride (AlGaN) and indium gallium nitride (InGaN) are becoming increasingly important in the world of semiconductors and in modern life - being used to make high power transistors and LEDs. However GaN is much less understood than oth...
| Main Author: | |
|---|---|
| Published: |
University of Cambridge
2006
|
| Subjects: | |
| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.597494 |