Selective area growth of III-V semiconductor compounds using Ga+ FIB deposition during MBE growth
Selective area growth of III-V semiconductor compounds using molecular beam epitaxy (MBE) has been envisaged as an <I>in situ</I> fabrication method for integrated circuits on a nanometer scale. However, conventional selective area growth techniques using MBE are limited to only two dime...
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University of Cambridge
2001
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.596523 |