Transport properties of a quantum dot modulation-doped field-effect transistor
This dissertation reports on the properties of a two-dimensional electron system in the presence of charge which is localised in the close vicinity. This is realised in a GaAs/Al<sub>0.33</sub>Ga<sub>0.67</sub>As semiconductor heterostructure containing a layer of InAs self-a...
| Main Author: | |
|---|---|
| Published: |
University of Cambridge
2005
|
| Subjects: | |
| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.596501 |