Growth and characterization of bulk GaAs1-xBix/GaAs diodes
To explore the feasibility of utilising gallium arsenide bismide (GaAsBi) as a material for use in solar cells, undoped GaAsBi layers ranging from 50 nm to 350 nm in thickness have been grown by molecular beam epitaxy (MBE) in a p-i-n diode configuration. A growth interrupt technique was employed in...
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University of Sheffield
2014
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.595275 |