MOCVD growth and optical investigation of III-nitride materials including non-polar and semi-polar GaN
This thesis focuses on the growth of high quality III-nitride materials by MOCVD along both c-direction and non-polar a-direction. High temperature AlN buffer layer is introduced, which can effectively reduce the dislocation density of the overlying layer. Stimulated emission at 340nm has been obtai...
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University of Sheffield
2014
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.589364 |