Investigation of 1.55 m GalnNAsSb/GaNAs semiconductor quantum well laser structures
A new GaAs based material system capable of emission at 1.55 m is a quantum well of the quinary material GalnNAsSb sandwiched between GaNAs barriers. This material couples 1.55 m emission with the inherent ability of GaAs based devices to be made into VCSELs, making it a very promising solution to b...
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Cardiff University
2010
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.584767 |