Growth and characterisation of indium nitride
Indium nitride (InN) was grown on both c-plane sapphire and borosilicate glass substrates by reactive evaporation. The reactive evaporation growth technique proved to be simple, cost-effective and offered the advantage of low growth temperature with consistency in growing good quality material with...
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Cardiff University
2008
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.584421 |