Gain studies of dilute nitride semiconductor materials
Due to the increased use of optical fibre communications, there is much interest in semiconductor lasers operating between 1.3 and 1.6pm and grown on GaAs substrates. One approach used to achieve this is the dilute nitride material, InGaAsN. In this work, the segmented contact method was used to stu...
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Cardiff University
2006
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.583803 |