An ab initio study of the origin of p-type doping in ZnO using group-V elements
Zinc oxide is a transparent semiconductor with a direct wide band-gap 3.4 eV and large exciton binding-energy of 60 meV, that combine to make ZnO a promising material for possible applications such as optoelectronic devices, lasers and light emitting diodes. Recently, the difficulty in obtaining hig...
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University of Newcastle Upon Tyne
2011
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.566911 |