Modelling of silicon-germanium alloy heterostructures using double group formulation of k . p theory
Silicon-Germanium alloy heterostructures offer the most viable opportunity to integrate electronics with optoelectronic devices for widespread commercial application. Indeed Germanium rich devices may be designed for application around 1.5 m by preying on the direct-gap energy of 890meV. Low power o...
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Imperial College London
2012
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.556560 |