A study of reactive sputter etching by directed ion beams and R.F. plasmas
This work compares the alternative methods of etching silicon semiconductor materials. Conventional methods of pattern delineation using aqueous etchants are being replaced for some applications by dry processing. The reasons for the move towards plasma and ion beam etching are examined particularly...
| Main Author: | |
|---|---|
| Published: |
Middlesex University
1982
|
| Subjects: | |
| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.523824 |