Novel dilute nitride semiconductor materials for mid-infrared applications
A new approach to room temperature mid-infrared applications in the 3 -5 µm spectral range has been proposed through the development of novel dilute nitride materials. InAsN shows a large bandgap reduction with a small lattice mismatch when a small amount of nitrogen is introduced into the host InAs...
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Lancaster University
2008
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.518191 |