Optically detected X-ray absorption spectroscopy (OD-XAS) study of InGaN/GaN quantum well and quantum dot nanostructures
InGaN/GaN single quantum well (SQW) and quantum dot (QD) samples were studied using optically detected X-ray absorption spectroscopy (OD-XAS). This is a powerful technique, capable of linking local structural environment information with the luminescence emission processes present. Ga K-edge OD-EXAF...
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University of Manchester
2009
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.516410 |