Analytical transmission electron microscopy of InAs/GaAs quantum dots and GaInNAs/GaAs quantum wells
Structure and chemical composition of InAs/GaAs quantum dots and GaInNAs/GaAs quantum wells were investigated using analytical transmission electron microscopy. These material systems are of importance for fabricating optoelectronic devices capable of operating in the 1.3 – 1.55 μm wavelength range....
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Imperial College London
2009
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.513423 |