Impact ionisation in InGaAs, InA1As and InGaAs/GaAsSb superlattices for near infrared avalanche photodetectors
This work investigates the avalanche characteristics of ln0.53Ga0.47As, In0.52Al0.48As and type-II heterojunction material systems for applications in telecommunication and next generation mid-wave infrared avalanche photodiodes (APDs). This work carries out the first ever reported excess noise meas...
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University of Sheffield
2008
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.489051 |