Some effects of implanting Te and Sn into single crystal GaAs
Some of the effects of implanting tellurium and tin into single crystal gallium arsenide are described in this thesis. The distribution and retention of tellurium and tin implanted into GaAs, the properties of the ion implantation damage and the. electrical properties of the ion implanted impurities...
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University of Surrey
1975
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.456736 |