Metastable and equilibrium structures in semiconducting silicides
The low temperature form of the iron disilicide (P-FeSi2) phase has been widely shown to be a promising material for Si-based opto-electronics devices due to its direct band gap (0.87 eV). These materials can be easily produced using a wide range of techniques. This work focuses on two techniques th...
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University of Surrey
2003
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.418625 |