Interaction of oxygen and nitrogen impurities with dislocations in silicon single-crystals
An experimental technique based on the immobilisation of dislocations by segregation of impurity atoms to the dislocation core (dislocation locking) has been developed and used to investigate the critical conditions for slip occurrence in Czochralski-grown and nitrogen-doped floating-zone-grown sili...
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University of Oxford
2004
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.409034 |