On the growth of (100) GaAs and (100) InAs by molecular beam epitaxy

Si and Sn doped GaAs epilayers were grown with electron concentrations from 8x10[to the power of 14] cm[to the power of -3] (u77=28x10[to the power of 3] cm[to the power of 2]/V-8) up to a peak of 1.16x10[to the power of 19] cm[to the power of-3] (using Sn).

Bibliographic Details
Main Author: Newstead, Simon Marc
Published: London Metropolitan University 1987
Subjects:
Online Access:https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.380790
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spelling ndltd-bl.uk-oai-ethos.bl.uk-3807902018-11-08T03:19:47ZOn the growth of (100) GaAs and (100) InAs by molecular beam epitaxyNewstead, Simon Marc1987Si and Sn doped GaAs epilayers were grown with electron concentrations from 8x10[to the power of 14] cm[to the power of -3] (u77=28x10[to the power of 3] cm[to the power of 2]/V-8) up to a peak of 1.16x10[to the power of 19] cm[to the power of-3] (using Sn).530.41530 PhysicsLondon Metropolitan Universityhttps://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.380790http://repository.londonmet.ac.uk/3065/Electronic Thesis or Dissertation
collection NDLTD
sources NDLTD
topic 530.41
530 Physics
spellingShingle 530.41
530 Physics
Newstead, Simon Marc
On the growth of (100) GaAs and (100) InAs by molecular beam epitaxy
description Si and Sn doped GaAs epilayers were grown with electron concentrations from 8x10[to the power of 14] cm[to the power of -3] (u77=28x10[to the power of 3] cm[to the power of 2]/V-8) up to a peak of 1.16x10[to the power of 19] cm[to the power of-3] (using Sn).
author Newstead, Simon Marc
author_facet Newstead, Simon Marc
author_sort Newstead, Simon Marc
title On the growth of (100) GaAs and (100) InAs by molecular beam epitaxy
title_short On the growth of (100) GaAs and (100) InAs by molecular beam epitaxy
title_full On the growth of (100) GaAs and (100) InAs by molecular beam epitaxy
title_fullStr On the growth of (100) GaAs and (100) InAs by molecular beam epitaxy
title_full_unstemmed On the growth of (100) GaAs and (100) InAs by molecular beam epitaxy
title_sort on the growth of (100) gaas and (100) inas by molecular beam epitaxy
publisher London Metropolitan University
publishDate 1987
url https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.380790
work_keys_str_mv AT newsteadsimonmarc onthegrowthof100gaasand100inasbymolecularbeamepitaxy
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