On the growth of (100) GaAs and (100) InAs by molecular beam epitaxy
Si and Sn doped GaAs epilayers were grown with electron concentrations from 8x10[to the power of 14] cm[to the power of -3] (u77=28x10[to the power of 3] cm[to the power of 2]/V-8) up to a peak of 1.16x10[to the power of 19] cm[to the power of-3] (using Sn).
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London Metropolitan University
1987
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.380790 |