Thin film encapsulants for gallium arsenide
The problems associated with the use of ion implantation during the preparation of compound semiconductors have been examined. In particular, the use of an encapsulant as protection during annealing was considered and the properties and ease of preparation of the ideal encapsulant were studied. Amon...
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University of Surrey
1987
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.379428 |