Rapid thermal annealing of donor implants in gallium arsenide
Rapid thermal annealing was used to produce n⁺-surface layers in tin- and selenium-implanted GaAs. Hall effect and differential Van der Pauw measurements were performed and peak electron carrier concentrations of about 9 x 10¹⁸ cm⁻³ with corresponding sheet resistivities as low as 28 Ω/□, were achie...
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University of Surrey
1986
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.374618 |