Maximum-entropy mobility spectrum of two-dimensional hole gas in strained-Si₁-ₓGeₓ/Si heterostructures

Magnetotransport properties of modulation-doped p-type Si₁-ₓGeₓ/Si and Si₁-ₓGeₓ/Si₁₋<sub>y</sub>Ge<sub>y</sub> heterostructures were studied, in the magnetic field range 0-12 T, and in the temperature range 0.35-300 K. The experimental data within the classical regime have be...

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Bibliographic Details
Main Author: Kiatgamolchai, Somchai
Published: University of Warwick 2000
Subjects:
Online Access:http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.364676