Maximum-entropy mobility spectrum of two-dimensional hole gas in strained-Si₁-ₓGeₓ/Si heterostructures
Magnetotransport properties of modulation-doped p-type Si₁-ₓGeₓ/Si and Si₁-ₓGeₓ/Si₁₋<sub>y</sub>Ge<sub>y</sub> heterostructures were studied, in the magnetic field range 0-12 T, and in the temperature range 0.35-300 K. The experimental data within the classical regime have be...
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University of Warwick
2000
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Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.364676 |