Ion beam synthesis of silicide layers for silicon bipolar applications
This thesis reports a study of the microstructural and electrical characterization of high quality epitaxial CoSi2 layers fabricated by the relatively new technique of Ion Beam Synthesis (IBS). The effect of incorporating common device processing dopants such as phosphorus, arsenic, antimony, boron...
| Main Author: | |
|---|---|
| Published: |
University of Surrey
1993
|
| Subjects: | |
| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.359870 |