The influence of pressure on (Ga In) (As P) quaternary semiconductor lasers
Results are presented of high pressure studies of some optical, electrical and band-structure characteristics of the quaternary semiconductor alloy In[1-x] Ga[x] Asy P[1-y]. The first pressure measurements on lasers with a 1.3 um (In Ga) (As P) active layer have been made in order to determine the c...
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University of Surrey
1983
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.349656 |