Interdiffusion of III-V semiconductors heterostructures : effects of ion implantation and doping
Photoluminescence coupled with repetitive thermal annealing has been used to determine diffusion coefficients for intermixing in In0.2Ga0.8As/GaAs and GaAs/Al0.2Ga0.8As 100A single quantum wells and to study the effects of doping with silicon and beryllium and of ion implantation on the interdiffusi...
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University of Surrey
1993
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.335632 |