Charge conduction through silicon dioxide during ion implantation
Ion implantation is used to dope silicon substrates during the manufacture of integrated circuits. Insulating films, inevitably present on the wafer surface during a typical metal-oxide-silicon process, will prevent the charge introduced by the ions from being conducted away. The resultant charge ac...
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University of Surrey
1989
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.329673 |