Interdiffusion in InGaAs/GaAs strained quantum wells
This thesis presents the results of a study of the interdiffusion of InGaAs/GaAs structures. Photoluminescence in conjunction with a model for the interdiffusion has been used to show that the diffusion obeys Fick's law and that there are two distinct diffusion regions. The first is a fast init...
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University of Surrey
1991
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.303221 |