Implant isolation of InP-based materials
There has been great interest in using ion implantation for III-V semiconductor device isolation as an alternative to mesa isolation technique. This is attributed to several advantages that implant isolation has over mesa isolation. Mesa isolation exhibits problems such as over/under etching, repeat...
| Main Author: | |
|---|---|
| Published: |
University of Surrey
2003
|
| Subjects: | |
| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.288682 |