Radiation effects in metal-oxide-semiconductor capacitors
An investigation has been undertaken into the effects of various radiations on commercially made Al-SiO2-Si Capacitors (MOSCs). Detailed studies of the electrical and physical nature of such devices have been used to characterise both virgin and irradiated devices. In particular, an investigation of...
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Aston University
1987
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.278118 |