Photonic integration in InGaAs/InGaAsP multiple-quantum well laser structures using quantum well intermixing
The damage introduced into an InGaAs/InGaAsP quantum well structure during CH4/H2 reactive ion etching (RIE) processes was measured, for plasma powers from 20 W to 100 W, using low temperature photoluminescence. The damage depth profile is estimated to be around 12 nm - 70 nm after annealing at 500...
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University of Glasgow
1998
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.263437 |