Impact ionisation in bulk semiconductors and superlattice devices
This thesis reports results of experimental and theoretical investigations of impact ionisation in semiconductors. The impact ionisation rates for electrons and holes (alpha and beta respectively) are important parameters which determine the performance of several high-field semiconductor devices, i...
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University of Surrey
1990
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.255850 |