The theory of the electronic structure of GaNxAs1-x and InyGa1-yNxAs1-x
We use an accurate sp3V* tight-binding Hamiltonian to present a strong case to support the theory of a two-band anti-crossing model describing the electronic structure of GaNxAs1-x and InyGa1-yNxAs1-x alloys, in terms of the interaction between the conduction band edge and a higher-lying band of res...
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University of Surrey
2002
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.250837 |