Structural characterisation of MBE grown Si and SiGe material
The application of advanced X-ray techniques, using both laboratory and synchrotron radiation sources, to the structural characterisation of semiconductor multilayer systems is described with reference to their use in understanding the growth by Molecular Beam Epitaxy of SiGe layers. These layers, p...
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University of Warwick
1991
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.238737 |