Transmission electron microscope techniques for the characterisation of III-V semiconductor heterostructures
The development of atomic layer epitaxial growth techniques for semiconductors has allowed structures to be fabricated in which layers of different composition (and therefore different bandgap) are successively deposited. Layer thicknesses are typically a few tens of nanometres and may even be of un...
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University of Cambridge
1987
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.233706 |