Oxygen plasma stripping of photoresist from bipolar integrated circuit wafers - process development

Oxygen plasma stripping of photoresist from bipolar integrated circuit wafers - process development

The development of a plasma strip process, in which an oxygen plasma removes photoresist films from etched silicon wafers, is described. The ultimate objective was to demonstrate that dry plasm stripping is a reliable, cost-effective, production-compatible process that does not compromise product re...

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Bibliographic Details
Main Author: Ulanmo, Peter Obiajulu
Format: Others
Published: DigitalCommons@Robert W. Woodruff Library, Atlanta University Center 1981
Subjects:
Chemical Engineering
Online Access:http://digitalcommons.auctr.edu/dissertations/690
http://digitalcommons.auctr.edu/cgi/viewcontent.cgi?article=2228&context=dissertations
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spelling ndltd-auctr.edu-oai-digitalcommons.auctr.edu-dissertations-22282015-07-29T03:02:11Z Oxygen plasma stripping of photoresist from bipolar integrated circuit wafers - process development Ulanmo, Peter Obiajulu The development of a plasma strip process, in which an oxygen plasma removes photoresist films from etched silicon wafers, is described. The ultimate objective was to demonstrate that dry plasm stripping is a reliable, cost-effective, production-compatible process that does not compromise product reliability. Optimum process parameters were determined to be an RF power level of 450 watts and an oxygen flow rate of 600 cc per minute. Metallized and glass-coated bipolar devices produced with the plasma stripping process have satisfactorily demonstrated production yield equivalency. The end point of plasma stripping was determined quantitatively. 1981-07-01T07:00:00Z text application/pdf http://digitalcommons.auctr.edu/dissertations/690 http://digitalcommons.auctr.edu/cgi/viewcontent.cgi?article=2228&context=dissertations ETD Collection for Robert W. Woodruff Library, Atlanta University Center DigitalCommons@Robert W. Woodruff Library, Atlanta University Center Chemical Engineering
collection NDLTD
format Others
sources NDLTD
topic Chemical Engineering
spellingShingle Chemical Engineering
Ulanmo, Peter Obiajulu
Oxygen plasma stripping of photoresist from bipolar integrated circuit wafers - process development
description The development of a plasma strip process, in which an oxygen plasma removes photoresist films from etched silicon wafers, is described. The ultimate objective was to demonstrate that dry plasm stripping is a reliable, cost-effective, production-compatible process that does not compromise product reliability. Optimum process parameters were determined to be an RF power level of 450 watts and an oxygen flow rate of 600 cc per minute. Metallized and glass-coated bipolar devices produced with the plasma stripping process have satisfactorily demonstrated production yield equivalency. The end point of plasma stripping was determined quantitatively.
author Ulanmo, Peter Obiajulu
author_facet Ulanmo, Peter Obiajulu
author_sort Ulanmo, Peter Obiajulu
title Oxygen plasma stripping of photoresist from bipolar integrated circuit wafers - process development
title_short Oxygen plasma stripping of photoresist from bipolar integrated circuit wafers - process development
title_full Oxygen plasma stripping of photoresist from bipolar integrated circuit wafers - process development
title_fullStr Oxygen plasma stripping of photoresist from bipolar integrated circuit wafers - process development
title_full_unstemmed Oxygen plasma stripping of photoresist from bipolar integrated circuit wafers - process development
title_sort oxygen plasma stripping of photoresist from bipolar integrated circuit wafers - process development
publisher DigitalCommons@Robert W. Woodruff Library, Atlanta University Center
publishDate 1981
url http://digitalcommons.auctr.edu/dissertations/690
http://digitalcommons.auctr.edu/cgi/viewcontent.cgi?article=2228&context=dissertations
work_keys_str_mv AT ulanmopeterobiajulu oxygenplasmastrippingofphotoresistfrombipolarintegratedcircuitwafersprocessdevelopment
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