Susceptor Assisted Microwave Annealing Of Ion Implanted Silicon
abstract: This thesis discusses the use of low temperature microwave anneal as an alternative technique to recrystallize materials damaged or amorphized due to implantation techniques. The work focuses on the annealing of high-Z doped Si wafers that are incapable of attaining high temperatures requi...
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| Format: | Dissertation |
| Language: | English |
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2011
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| Online Access: | http://hdl.handle.net/2286/R.I.9106 |