Characterization of Copper-doped Silicon Dioxide Programmable Metallization Cells

Characterization of Copper-doped Silicon Dioxide Programmable Metallization Cells

abstract: Programmable Metallization Cell (PMC) is a resistance-switching device based on migration of nanoscale quantities of cations in a solid electrolyte and formation of a conducting electrodeposit by the reductions of these cations. This dissertation presents electrical characterization result...

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Bibliographic Details
Other Authors: Puthenthermadam, Sarath (Author)
Format: Doctoral Thesis
Language:English
Published: 2011
Subjects:
Electrical Engineering
Materials Science
cbram
copper doped silicon dioxide
non volatile memory
passive array
resistance switching
Online Access:http://hdl.handle.net/2286/R.I.8900

Internet

http://hdl.handle.net/2286/R.I.8900

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