Growth of GaN Nanowires: A Study Using In Situ Transmission Electron Microscopy
abstract: Owing to their special characteristics, group III-Nitride semiconductors have attracted special attention for their application in a wide range of optoelectronic devices. Of particular interest are their direct and wide band gaps that span from ultraviolet to the infrared wavelengths. In a...
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| Format: | Doctoral Thesis |
| Language: | English |
| Published: |
2010
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| Online Access: | http://hdl.handle.net/2286/R.I.8801 |