Structural Characterization of III-V Bismide Materials Grown by Molecular Beam Epitaxy

Structural Characterization of III-V Bismide Materials Grown by Molecular Beam Epitaxy

abstract: III-V-bismide semiconductor alloys are a class of materials with applications in the mid and long wave infrared spectrum. The quaternary alloy InAsSbBi is attractive because it can be grown lattice-matched to commercially available GaSb substrates, and the adjustment of the Bi and Sb mole...

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Bibliographic Details
Other Authors: Kosireddy, Rajeev Reddy (Author)
Format: Doctoral Thesis
Language:English
Published: 2020
Subjects:
Materials Science
Bismides
III-V Semiconductors
Molecular Beam Epitaxy
Structural Characterisation
Transmission electron microscopy
X-ray Diffraction
Online Access:http://hdl.handle.net/2286/R.I.57076

Internet

http://hdl.handle.net/2286/R.I.57076

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