Predictive Process Design Kits for the 7 nm and 5 nm Technology Nodes
abstract: Recent years have seen fin field effect transistors (finFETs) dominate modern complementary metal oxide semiconductor (CMOS) processes, [1][2], e.g., at the sub 20 nm technology nodes, as they alleviate short channel effects, provide lower leakage, and enable some continued VDD scaling. Ho...
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| Format: | Doctoral Thesis |
| Language: | English |
| Published: |
2019
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| Online Access: | http://hdl.handle.net/2286/R.I.55687 |